A new type of resistive RAM or ReRAM in short has been announced by Fujitsu. The specialty of Fujitsu’s ReRAM is its low power consumption and very low fluctuation of its resistive value.
Fujitsu has made a little twist of the structure of their ReRAM by adding titanium (Ti) to nickel oxide (NiO), and by limiting the current flow from the transistor. And the result is the current needed to erase memory is now reduced to 100 micro-amperes or less. Besides, high-speed erasure operations take only 5 nanoseconds. Fluctuation of resistance value that commonly seen in conventional ReRAMs which affects quality has been reduced to one-tenth (1/10th) that of conventional ReRAMs.
The low-power consumption and high-speed of Fujitsu’s ReRAM makes it an good alternative to produce low-cost embedded memory which would be major rival to flash memory. ReRAM is a type of memory that uses material for which the resistance value changes when voltage is applied. ReRAM is amenable to miniaturization and can be manufactured inexpensively, making it attractive as an alternative to flash memory.
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